Electrical properties of Mg x Zn1−x O thin films deposited by using RF magnetron co-sputtering with ZnO and Mg0.3Zn0.7O targets
| العنوان: | Electrical properties of Mg x Zn1−x O thin films deposited by using RF magnetron co-sputtering with ZnO and Mg0.3Zn0.7O targets |
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| المؤلفون: | Hong Seung Kim, Yi Da Yang, Li Li Yue, Young Yun, Nak Won Jang |
| المصدر: | Journal of the Korean Physical Society. 68:686-691 |
| بيانات النشر: | Korean Physical Society, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Oxygen, chemistry, Hall effect, Electrical resistivity and conductivity, Sputtering, 0103 physical sciences, Electrode, Cavity magnetron, Thin film, 0210 nano-technology, Wurtzite crystal structure |
| الوصف: | We successfully deposited hexagonal wurtzite Mg x Zn1−x O (0 ≤ x ≤ 0.18) films on Si substrates by using RF magnetron co-sputtering with ZnO and Mg0.3Zn0.7O targets. The Mg content was varied by controlling the RF power of the Mg0.3Zn0.7O target while the RF power of the ZnO target was fixed at 100 W. The electrical properties of the Mg x Zn1−x O films were investigated by using a transmission line model (TLM) with Ti/Au electrode and Hall effect measurements. The X-ray diffraction (XRD) results demonstrate that some Zn atoms can be replaced by Mg atoms in the Mg x Zn1−x O films. As the Mg content was increased from 0 at.% to 18 at.%, the resistivity of Mg x Zn1−x O films increased and the carrier concentration decreased from 1.17 × 1019 cm−3 to 1.17 × 1017 cm−3, which indicates a decrease in the number of oxygen vacancies. Meanwhile, the Hall mobility increased to 15.3 cm2/Vs. The electrical properties of Mg x Zn1−x O films were tuned by using the Mg content. |
| تدمد: | 1976-8524 0374-4884 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::4afb93e6768a9151f2f639097af26a0a https://doi.org/10.3938/jkps.68.686 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........4afb93e6768a9151f2f639097af26a0a |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 19768524 03744884 |
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