التفاصيل البيبلوغرافية
العنوان:
Wide Bandgap SiC power devices
المؤلفون:
C.C. Hung , C.Y. Lee , C.T Yen , Ian Chan
المصدر:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT) .
بيانات النشر:
IEEE, 2014.
سنة النشر:
2014
مصطلحات موضوعية:
Materials science , business.industry , Band gap , Power electronics , Power module , Wide-bandgap semiconductor , Optoelectronics , Power semiconductor device , Substrate (electronics) , Electricity , business
الوصف:
SiC is a promising material for power electronics which can help us to use electricity more convinient and efficient. The adoption of SiC power devices will speed up through the improvement of technology and the reduction of substrate cost.
URL الوصول:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c88788efec5a096d22845c4cb833af1 https://doi.org/10.1109/icsict.2014.7021228
رقم الأكسشن:
edsair.doi...........4c88788efec5a096d22845c4cb833af1
قاعدة البيانات:
OpenAIRE
