Simulation study of an optimized current matching for In0.39Ga0.61N/In0.57Ga0.43N/In0.74Ga0.26N triple-junction solar cells
| العنوان: | Simulation study of an optimized current matching for In0.39Ga0.61N/In0.57Ga0.43N/In0.74Ga0.26N triple-junction solar cells |
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| المؤلفون: | Fortunato Pezzimenti, Lakhdar Dehimi, H. Bencherif, Y. Marouf |
| المصدر: | Journal of Computational Electronics. 20:1296-1309 |
| بيانات النشر: | Springer Science and Business Media LLC, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Band gap, 02 engineering and technology, Indium gallium nitride, 01 natural sciences, law.invention, chemistry.chemical_compound, law, 0103 physical sciences, Solar cell, Electrical and Electronic Engineering, Diode, 010302 applied physics, business.industry, Doping, Energy conversion efficiency, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Modeling and Simulation, Optoelectronics, 0210 nano-technology, business, Current density, Voltage |
| الوصف: | This paper deals with the design and optimization of a triple-junction (TJ) solar cell using indium gallium nitride (InGaN) material. Two tunnel diodes are used to ensure connection between the different subcells. A comprehensive study is performed by means of 2D numerical simulations to locate the best bandgap combination that leads to an optimized current matching. During the simulations, the doping concentration and the base thickness are considered as fitting parameters for the top and the middle subcells. The In0.39Ga0.61N/In0.57Ga0.43N/In0.74Ga0.26N bandgap combination is supposed to be 2.02 eV/1.52 eV/1.13 eV. A high short-circuit current density (13.313 mA/cm2) is achieved by assuming a base thickness of 1 µm for each subcell and a p/n doping ratio of 5 × 1018 cm−3/5 × 1015 cm−3 in the top cell, 1.5 × 1019 cm−3/1.5 × 1016 cm−3 in the middle cell, and 7.5 × 1018 cm−3/7.5 × 1015 cm−3 in the bottom cell. The optimized structure has an improved open-circuit voltage (2.877 V), fill factor (83%), and conversion efficiency (33.11%). |
| تدمد: | 1572-8137 1569-8025 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::4d455d1ea9a0577a59c8d97cca606a92 https://doi.org/10.1007/s10825-021-01695-7 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........4d455d1ea9a0577a59c8d97cca606a92 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 15728137 15698025 |
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