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Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing

التفاصيل البيبلوغرافية
العنوان: Formation of Gallium Nitride (GaN) Transition Layer by Plasma Immersion Ion Implantation and Rapid Thermal Annealing
المؤلفون: Paul K. Chu, S. P. Wong, Chung Chan, Aaron HoPui Ho, Dixon T. K. Kwok, Xuchu Zeng
المصدر: MRS Proceedings. 618
بيانات النشر: Springer Science and Business Media LLC, 2000.
سنة النشر: 2000
مصطلحات موضوعية: Materials science, Ion beam, business.industry, Gallium nitride, Chemical vapor deposition, Plasma-immersion ion implantation, Amorphous solid, chemistry.chemical_compound, Semiconductor, chemistry, Optoelectronics, Metalorganic vapour phase epitaxy, Thin film, business
الوصف: Recent advances in the preparation of gallium nitride (GaN) and related compounds have made possible the production of blue semiconductor laser. Conventional preparation involves growing GaN thin films on lattice-mismatching sapphire using metal-organic chemical vapor deposition (MOCVD). In this article, we describe an alternative method to produce a lattice-matching strained layer in GaAs for subsequent GaN growth by plasma immersion ion implantation (PIII) followed by rapid thermal annealing. Our novel approach uses broad ion impact energy distribution and multiple implant voltages to form a spread-out nitrogen depth profile and an amorphous surface layer. This approach circumvents the retained dose and low nitrogen content problems associated with ion beam implantation at fix energy. Based on our Raman study, the resulting structure after PIII and rapid thermal annealing is strained and contains some GaN possibly in crystal form
تدمد: 1946-4274
0272-9172
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::4f8f4aa98d639382d491ed738b75000a
https://doi.org/10.1557/proc-618-309
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........4f8f4aa98d639382d491ed738b75000a
قاعدة البيانات: OpenAIRE
الوصف
تدمد:19464274
02729172