Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate
| العنوان: | Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate |
|---|---|
| المؤلفون: | Po Wen Sze, Nan Ying Yang, Yeong-Her Wang, Kuan Wei Lee, Mau-Phon Houng |
| المصدر: | Applied Physics Letters. 87:263501 |
| بيانات النشر: | AIP Publishing, 2005. |
| سنة النشر: | 2005 |
| مصطلحات موضوعية: | Materials science, Physics and Astronomy (miscellaneous), business.industry, Transistor, Gate dielectric, Analytical chemistry, Oxide, Time-dependent gate oxide breakdown, law.invention, Impact ionization, chemistry.chemical_compound, chemistry, Gate oxide, law, Breakdown voltage, Optoelectronics, business, Leakage (electronics) |
| الوصف: | The In0.52Al0.48As∕In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10–15nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height. |
| تدمد: | 1077-3118 0003-6951 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::4fc5fcf2ec333d36d417863fb105c7db https://doi.org/10.1063/1.2151252 |
| رقم الأكسشن: | edsair.doi...........4fc5fcf2ec333d36d417863fb105c7db |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Scitation. | تدمد: | 10773118 00036951 |
|---|