The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices
| العنوان: | The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices |
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| المؤلفون: | Jen Yi Su, Guo-Wei Huang, Chinchun Meng, Bo Chen Tsou |
| المصدر: | IEICE Transactions on Electronics. :520-523 |
| بيانات النشر: | Institute of Electronics, Information and Communications Engineers (IEICE), 2006. |
| سنة النشر: | 2006 |
| مصطلحات موضوعية: | Materials science, business.industry, Bicmos process, Bipolar junction transistor, Electrical engineering, Optoelectronics, Electrical and Electronic Engineering, business, Noise (electronics), Capacitance, Electronic, Optical and Magnetic Materials, Ion |
| الوصف: | A selectively ion-implanted collector (SIC) is implemented in a 0.8μm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f t and f max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The I t is 7.8 GHz and f max is 9.5 GHz for the SIC BJT device while the f t is 7.2 GHz and f max is 4.5 GHz for the FIC BJT device when biased at V ce =3.6V and J c =0.07 mA/μm 2 . The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device. |
| تدمد: | 1745-1353 0916-8524 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::508674d32e360ee8a9c1ed1e6495bbd8 https://doi.org/10.1093/ietele/e89-c.4.520 |
| رقم الأكسشن: | edsair.doi...........508674d32e360ee8a9c1ed1e6495bbd8 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 17451353 09168524 |
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