Modeling ion implantation of HgCdTe
| العنوان: | Modeling ion implantation of HgCdTe |
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| المؤلفون: | B. L. Williams, S. Holander-Gleixner, Jengyi Yu, Hugh Robinson, D. H. Mao, C. R. Helms |
| المصدر: | Journal of Electronic Materials. 25:1336-1340 |
| بيانات النشر: | Springer Science and Business Media LLC, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Materials science, Solid-state physics, Annealing (metallurgy), Doping, chemistry.chemical_element, Condensed Matter Physics, Molecular physics, Electronic, Optical and Magnetic Materials, Photodiode, law.invention, chemistry.chemical_compound, Ion implantation, chemistry, law, Vacancy defect, Materials Chemistry, Mercury cadmium telluride, Electrical and Electronic Engineering, Boron |
| الوصف: | Ion implantation of boron is used to create n on p photodiodes in vacancy-doped mercury cadmium telluride (MC.T). The junction is formed by Hg interstitials from the implant damage region diffusing into the MC.T and annihilating Hg vacancies. The resultant doping profile is n+/n-/p, where the n+ region is near the surface and roughly coincides with the implant damage, the n- region is where Hg vacancies have been annihilated revealing a residual grown-in donor, and the p region remains doped by Hg vacancy double acceptors. We have recently developed a new process modeling tool for simulating junction formation in MC.T by ion implantation. The interstitial source in the damage region is represented by stored interstitials whose distribution depends on the implant dose. These interstitials are released into the bulk at a constant, user defined rate. Once released, they diffuse away from the damage region and annihilate any Hg vacancies they encounter. In this paper, we present results of simulations using this tool and show how it can be used to quantitatively analyze the effects of variations in processing conditions, including implant dose, annealing temperature, and doping background. |
| تدمد: | 1543-186X 0361-5235 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::518c5a886b8ff0f4f04b2ea778314843 https://doi.org/10.1007/bf02655029 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........518c5a886b8ff0f4f04b2ea778314843 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1543186X 03615235 |
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