Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry
| العنوان: | Investigation of the Optical Properties of InSb Thin Films Grown on GaAs by Temperature-Dependent Spectroscopic Ellipsometry |
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| المؤلفون: | Qingyi Yang, Zhe Chuan Feng, Xuguang Luo, Lingyu Wan, Yuanlan Liang, Ian T. Ferguson, Fangze Wang, Tao Lin, Qingxuan Li |
| المصدر: | Journal of Applied Spectroscopy. 86:276-282 |
| بيانات النشر: | Springer Science and Business Media LLC, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, 010401 analytical chemistry, Analytical chemistry, 02 engineering and technology, Chemical vapor deposition, Molar absorptivity, Atmospheric temperature range, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, 0104 chemical sciences, Critical point (thermodynamics), Excited state, Metalorganic vapour phase epitaxy, Thin film, 0210 nano-technology, Refractive index, Spectroscopy |
| الوصف: | InSb thin films were grown on GaAs substrates by metal organic chemical vapor deposition (MOCVD) and investigated by temperature-dependent spectroscopic ellipsometry (TD-SE). The refractive index, extinction coefficient, and dielectric function of the InSb films were extracted. The variation of critical point energies (E1, E1+Δ1, E2, $$ {E}_1^{\hbox{'}} $$ ) related to the excited state transitions of InSb and the second energy derivatives of the dielectric function at different temperatures showed that the InSb thin film had high electrical and optical stability at the evaluated temperatures. TD-SE analysis revealed a temperature range suitable for the use of InSb/GaAs-based devices. Beyond 250°C, InSb was heavily oxidized to form a thin In-O layer, causing a pronounced change in the optical constants. The results indicated that optimized InSb thin films grown on GaAs by MOCVD possess good optical and structural properties. |
| تدمد: | 1573-8647 0021-9037 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::52b51773c57e8626fa90117309d0dadb https://doi.org/10.1007/s10812-019-00812-6 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........52b51773c57e8626fa90117309d0dadb |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 15738647 00219037 |
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