V-band flip-chip pHEMT balanced power amplifier with CPWGMS-CPWG topology and CPWG Lange couplers

التفاصيل البيبلوغرافية
العنوان: V-band flip-chip pHEMT balanced power amplifier with CPWGMS-CPWG topology and CPWG Lange couplers
المؤلفون: Wei-Ling Chang, Chinchun Meng, Jen-Yi Su, Guo-Wei Huang, Chia-Hung Chang
المصدر: 2017 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
بيانات النشر: IEEE, 2017.
سنة النشر: 2017
مصطلحات موضوعية: Physics, business.industry, Coplanar waveguide, Amplifier, 020208 electrical & electronic engineering, Transistor, Electrical engineering, 020206 networking & telecommunications, Topology (electrical circuits), 02 engineering and technology, High-electron-mobility transistor, Topology, Microstrip, Power (physics), law.invention, law, 0202 electrical engineering, electronic engineering, information engineering, business, V band
الوصف: A V-band balanced two-stage power amplifier MMICs with Lange couplers is demonstrated using 0.15 µm GaAs pHEMT technology in this paper. A CPWG-MS-CPWG topology with via holes at the transistors as the transition between coplanar waveguide with backside ground (CPWG) and microstrip (MS) is employed for the two-stage amplifier. CPWG is applied to realize the flip-chip transition interface for both input and output ports of the amplifier and interstage MS matching has the advantage of small size. The structure parameters of the CPWG Lange coupler and matching network are designed and optimized for power combining. Finally, a 60-GHz balanced two-stage power amplifier using a CPWG-MS-CPWG structure delivers the small signal gain of 18 dB, OP 1dB of 12 dBm and P sat of 15 dBm.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::52fcdaa7252ba3abdf27b0a4b7063236
https://doi.org/10.1109/rfic.2017.7969006
رقم الأكسشن: edsair.doi...........52fcdaa7252ba3abdf27b0a4b7063236
قاعدة البيانات: OpenAIRE