Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories
| العنوان: | Triple-Level-Cell/Single-Level-Cell Mix-Mode Operation Induced Data Retention Degradation in 3-D NAND Flash Memories |
|---|---|
| المؤلفون: | Yu-Cheng Hsu, Wei Lin, Chih-Yuan Tseng, An-Chang Liu, Yang Yu-Siang, Yu-Heng Liu |
| المصدر: | IEEE Electron Device Letters. 42:1762-1765 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, business.industry, Cell, Triple level cell, Mode (statistics), NAND gate, Single level, Electronic, Optical and Magnetic Materials, Flash (photography), medicine.anatomical_structure, medicine, Degradation (geology), Optoelectronics, Electrical and Electronic Engineering, Data retention, business |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::533950bc2192bf24bd3ccf1b517c5b5f https://doi.org/10.1109/led.2021.3121213 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........533950bc2192bf24bd3ccf1b517c5b5f |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
|---|