High-Voltage AlInGaN LED Chips
| العنوان: | High-Voltage AlInGaN LED Chips |
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| المؤلفون: | A. S. Pavlyuchenko, O. V. Osipov, I. P. Smirnova, G. V. Itkinson, M. V. Kukushkin, L. K. Markov |
| المصدر: | Semiconductors. 53:1529-1534 |
| بيانات النشر: | Pleiades Publishing Ltd, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Topology (electrical circuits), High voltage, Heterojunction, 02 engineering and technology, STRIPS, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Chip, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, law, 0103 physical sciences, Optoelectronics, Quantum efficiency, 0210 nano-technology, business, Flip chip, Diode |
| الوصف: | A high-voltage light-emitting diode (LED) flip chip based on an AlInGaN heterostructure is developed and fabricated. The LED flip chip consists of 16 elements connected in series, each of which is a convential LED. The chip with a total area of 1.25 × 1.25 mm is intended for a working current of 20 mA and a forward voltage of 48 V. To improve the current-distribution uniformity over the active region of the chip elements and to minimize the losses of the element area occupied by the n-type contact, the n-type contact pads in them are arranged inside the p-type contact region due to the two-level metallization layout with an intermediate insulating layer of dielectric. The arrangement topology of the contact pads is developed using numerical simulation. An increase in the quantum efficiency of the chip is provided by the application of combinations of metals with a high reflectance at the LED emission wavelength, which are used when fabricating n- and p-type contacts as well as current-carrying strips. |
| تدمد: | 1090-6479 1063-7826 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::552c2e0186aca8f48c463cb975d38927 https://doi.org/10.1134/s1063782619110125 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........552c2e0186aca8f48c463cb975d38927 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 10906479 10637826 |
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