Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts
| العنوان: | Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts |
|---|---|
| المؤلفون: | Kristin De Meyer, Hao Yu, Nadine Collaert, Jean-Luc Everaert, Marc Schaekers, Naoto Horiguchi, Lin-Lin Wang, Dan Mocuta, Yu-Long Jiang |
| المصدر: | IEEE Electron Device Letters. 40:1712-1715 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Silicon, Doping, Analytical chemistry, Oxide, chemistry.chemical_element, Conductivity, 01 natural sciences, Omega, Oxygen, Electronic, Optical and Magnetic Materials, chemistry.chemical_compound, chemistry, Getter, Electrical resistivity and conductivity, 0103 physical sciences, Electrical and Electronic Engineering |
| الوصف: | Presence of a native oxide interlayer degrades seriously the contact resistivity ( $\rho _{{\text {c}}}$ ) of co-deposited TiSi (CD-TiSi) on Si:P. The oxide cannot be scavenged by the CD-TSi due to its low solid solubility of O. We tackle the problem by capping the CD-TiSi with an O gettering cap. Utilizing a Ti cap and two-step post-metal rapid thermal anneal, we reduce the $\rho _{{\text {c}}}$ of the CD-TiSi on ${2}\times {10}^{{21}}$ cm $^{-{3}}$ doped Si:P by ${\sim }{3}$ times, down to ${\sim }{2} \times {10}^{-{9}}\,\,\Omega \cdot \text {cm}^{{2}}$ . We also demonstrate efficiency of a La cap to scavenge the oxide. |
| تدمد: | 1558-0563 0741-3106 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::557556af834a734eeee8b4188061c860 https://doi.org/10.1109/led.2019.2940819 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........557556af834a734eeee8b4188061c860 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15580563 07413106 |
|---|