Study of the Effects of Mg and Be Co-Doping in GaN Layers
| العنوان: | Study of the Effects of Mg and Be Co-Doping in GaN Layers |
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| المؤلفون: | Jose Luis Pau, E. Muñoz, E. Calleja, Kimmo Saarinen, J. Oila, Fernando B. Naranjo, A. Jiménez, Miguel Sanchez-Garcia, P. Hautojärvi |
| المصدر: | physica status solidi (a). 180:97-102 |
| بيانات النشر: | Wiley, 2000. |
| سنة النشر: | 2000 |
| مصطلحات موضوعية: | Photoluminescence, Materials science, business.industry, Doping, Heterojunction, Electroluminescence, Condensed Matter Physics, Acceptor, Electronic, Optical and Magnetic Materials, law.invention, Full width at half maximum, law, Optoelectronics, business, Light-emitting diode, Molecular beam epitaxy |
| الوصف: | GaN:Mg/AlGaN single heterostructures were grown on Si(111) substrates by plasma-assisted molecular beam epitaxy (PAMBE) leading to the fabrication of light emitting diodes (LEDs). p-type is successfully achieved using Mg, obtaining hole concentrations in the range of 1 × 1017 cm—3. Although an intense and narrow (8 nm full width at half maximum) ultraviolet electroluminescence is observed under room temperature continuous-wave conditions, the electrical characteristics of the diode suffered mainly from a low p-type doping. In order to obtain higher hole concentrations and increase the performance of these devices, a study of the effects of Mg and Be co-doping is performed. Preliminary results show a decrease of the intensity of the yellow band in the photoluminescence spectra of co-doped samples in comparison with the Be-doped ones together with an increase of the intensity of the donor–acceptor pair related to the Be shallow acceptor. Both effects can be related to an increase in the p-type Be doping efficiency. |
| تدمد: | 1521-396X 0031-8965 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::559df2a707ff5ff8d6144662e02577b7 https://doi.org/10.1002/1521-396x(200007)180:1<97::aid-pssa97>3.0.co;2-k |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........559df2a707ff5ff8d6144662e02577b7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1521396X 00318965 |
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