Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET
| العنوان: | Temperature-Dependent Characterization, Modeling, and Switching Speed-Limitation Analysis of Third-Generation 10-kV SiC MOSFET |
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| المؤلفون: | Sheng Zheng, Shiqi Ji, Leon M. Tolbert, Fei Wang |
| المصدر: | IEEE Transactions on Power Electronics. 33:4317-4327 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2018. |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | 010302 applied physics, Engineering, business.industry, 020208 electrical & electronic engineering, Electrical engineering, Semiconductor device modeling, 02 engineering and technology, 01 natural sciences, Switching time, Parasitic capacitance, Saturation current, Overvoltage, 0103 physical sciences, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, Device under test, Electrical and Electronic Engineering, business, Diode |
| الوصف: | The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET including the static characteristics and switching performance are carried out in this paper. The steady-state characteristics, including saturation current, output characteristics, antiparallel diode, and parasitic capacitance, are tested. A double pulse test platform is constructed including a circuit breaker and gate drive with >10-kV insulation and also a hotplate under the device under test for temperature-dependent characterization during switching transients. The switching performance is tested under various load currents and gate resistances at a 7-kV dc-link voltage from 25 to 125 ˚C and compared with previous 10-kV MOSFETs. A simple behavioral model with its parameter extraction method is proposed to predict the temperature-dependent characteristics of the 10-kV SiC MOSFET. The switching speed limitations, including the reverse recovery of SiC MOSFET's body diode, overvoltage caused by stray inductance, crosstalk, heat sink, and electromagnetic interference to the control are discussed based on simulations and experimental results. |
| تدمد: | 1941-0107 0885-8993 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::57d3a8cd36ce028e434093407878720b https://doi.org/10.1109/tpel.2017.2723601 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........57d3a8cd36ce028e434093407878720b |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19410107 08858993 |
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