Origin of Vt Instabilities in High-$k$Dielectrics Jahn–Teller Effect or Oxygen Vacancies

التفاصيل البيبلوغرافية
العنوان: Origin of Vt Instabilities in High-$k$Dielectrics Jahn–Teller Effect or Oxygen Vacancies
المؤلفون: M. Denais, G. Ribes, C. Parthasarthy, Gerard Ghibaudo, Vincent Huard, T. Skotnicki, M. Muller, Sylvie Bruyere, David Roy
المصدر: IEEE Transactions on Device and Materials Reliability. 6:132-135
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE), 2006.
سنة النشر: 2006
مصطلحات موضوعية: Materials science, biology, Condensed matter physics, Jahn–Teller effect, chemistry.chemical_element, Trapping, Dielectric, Hafnia, biology.organism_classification, Oxygen, Electronic, Optical and Magnetic Materials, chemistry, Electrical and Electronic Engineering, Safety, Risk, Reliability and Quality, Quantum tunnelling, High-κ dielectric, Monoclinic crystal system
الوصف: In this paper, an analysis of the trapping in high- dielectrics and its origin is given. It is found that the defect is consistent with oxygen vacancies in monoclinic hafnia. Finally, guidelines are proposed to reduce these instabilities
تدمد: 1530-4388
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::598b6fa0fe1e4e15fec8f24719d2e65b
https://doi.org/10.1109/tdmr.2006.877867
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........598b6fa0fe1e4e15fec8f24719d2e65b
قاعدة البيانات: OpenAIRE