Growth and characterization of DH‐HEMT structures with various AlGaN barriers and AlN interlayers on 200 mm Si(111) substrates
| العنوان: | Growth and characterization of DH‐HEMT structures with various AlGaN barriers and AlN interlayers on 200 mm Si(111) substrates |
|---|---|
| المؤلفون: | Andrea Firrincieli, P. K. Kandaswamy, Ming Zhao, Stefaan Decoutere, Yoga Saripalli, E. Vancoille, Hu Liang |
| المصدر: | physica status solidi c. 11:446-449 |
| بيانات النشر: | Wiley, 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Materials science, business.industry, Transistor, Heterojunction, Chemical vapor deposition, High-electron-mobility transistor, Condensed Matter Physics, Characterization (materials science), law.invention, law, Optoelectronics, Wafer, business, Fermi gas, Sheet resistance |
| الوصف: | AlGaN/GaN/AlGaN double heterojunction high-electron-mobility transistors were grown on 200 mm Si (111) using metalorganic chemical vapor deposition. The Al composition of AlGaN barrier varied from 20 at% to 30 at% and thickness from 10 nm to 20 nm. In some structures, a 1 nm AlN interlayer was inserted between AlGaN barrier and GaN channel. The as-grown wafers were proven to be of high material quality and the layer thickness were well controlled to the target values. A buffer break down voltage of over 700 V were obtained for all grown wafers. Compared to their counterparts without AlN interlayer, structures with AlN interlayer showed a much lower and more uniform two-dimensional electron gas sheet resistance. With the presence of AlN interlayer, the sheet resistance was much less sensitive towards variations in AlGaN barrier composition and thickness. (© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| تدمد: | 1610-1642 1862-6351 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::59ed2a6f94b6114258cdd3dfce6c94e7 https://doi.org/10.1002/pssc.201300478 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........59ed2a6f94b6114258cdd3dfce6c94e7 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 16101642 18626351 |
|---|