Electrically induced breakdown of the quantum Hall effect at different Hall bar widths: Visualizing the edge- and bulk-dominated regimes within a quantum Hall plateau
العنوان: | Electrically induced breakdown of the quantum Hall effect at different Hall bar widths: Visualizing the edge- and bulk-dominated regimes within a quantum Hall plateau |
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المؤلفون: | J. Weis, M. Mausser, A. Gauß, K. von Klitzing, P. Haremski |
المصدر: | Physical Review B. 102 |
بيانات النشر: | American Physical Society (APS), 2020. |
سنة النشر: | 2020 |
مصطلحات موضوعية: | Physics, Condensed matter physics, Field (physics), Filling factor, Bar (music), 02 engineering and technology, Landau quantization, Quantum Hall effect, Condensed Matter::Mesoscopic Systems and Quantum Hall Effect, 021001 nanoscience & nanotechnology, Plateau (mathematics), 01 natural sciences, Magnetic field, Hall effect, 0103 physical sciences, 010306 general physics, 0210 nano-technology |
الوصف: | We present systematic investigations of the electrically induced breakdown of the integer quantum Hall effect (QHE) in (Al,Ga)As-based Hall bars of different widths ranging from 7 to 70 $\ensuremath{\mu}\mathrm{m}$. It is striking that, for the narrow Hall bars, the threshold values for the applied voltage that induces the breakdown of the longitudinal zero-resistance state differ appreciably between the upper and lower sides of a quantum Hall (QH) plateau. When moving from the low magnetic field side of the QH plateau to higher magnetic fields, the threshold rises in a strongly superlinear manner until---at the expected integer value for the Landau level (LL) filling factor in the bulk of the two-dimensional electron system (2DES)---the threshold value abruptly drops to low values for the rest of the plateau. With increasing widths of the Hall bars, the zero-resistance state extends slightly further to higher magnetic field values. The threshold values on the low-magnetic field side are almost independent of the Hall bar width, whereas the threshold values on the high magnetic field side scale linearly with the Hall bar width. These observations correspond perfectly with the microscope picture of the QHE where the biased current flows in a dissipationless manner in electrically incompressible regions of the 2DES of locally the same LL filling factor, driven by the respective drop of the Hall voltage over the width of these incompressible regions. Owing to the self-consistent evolution of the electrically incompressible/compressible landscape within the 2DES as a function of magnetic field, a transition from an edge- to a bulk-dominated QH regime is described within a QH plateau. This microscopic picture was derived from sophisticated, long-lasting scanning probe experiments measuring Hall potential profiles on typically 15-$\ensuremath{\mu}$m-wide Hall bars. Conversely, performing systematic electrically induced breakdown measurements like those presented here would allow us to identify the presence of edge- and bulk-dominated regimes of the QHE in a wider variety of samples. |
تدمد: | 2469-9969 2469-9950 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5a8a895153d3863c936c22c4258a5ce0 https://doi.org/10.1103/physrevb.102.205306 |
حقوق: | OPEN |
رقم الأكسشن: | edsair.doi...........5a8a895153d3863c936c22c4258a5ce0 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 24699969 24699950 |
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