Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces
| العنوان: | Formation of strained iron silicide nanodots by Fe deposition on Si nanodots on oxidized Si (111) surfaces |
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| المؤلفون: | Sung-Pyo Cho, Yoshiaki Nakamura, Yasushi Nagadomi, Nobuo Tanaka, Masakazu Ichikawa |
| المصدر: | Physical Review B. 72 |
| بيانات النشر: | American Physical Society (APS), 2005. |
| سنة النشر: | 2005 |
| مصطلحات موضوعية: | Reflection high-energy electron diffraction, Materials science, Crystal growth, Nanotechnology, Condensed Matter Physics, Epitaxy, Electronic, Optical and Magnetic Materials, law.invention, Crystallography, chemistry.chemical_compound, chemistry, Electron diffraction, law, Transmission electron microscopy, Silicide, Nanodot, Scanning tunneling microscope |
| الوصف: | We studied the epitaxial growth of iron silicide ({epsilon}-FeSi,{beta}-FeSi{sub 2}, and {alpha}-FeSi{sub 2}) nanodots on Si (111) substrates by Fe deposition on Si nanodots on Si (111) substrates with ultrathin Si oxide films using reflection high-energy electron diffraction, scanning tunneling microscopy, and transmission electron microscope (TEM). We formed almost single phase iron silicide nanodots by controlling the Fe deposition conditions; growth temperature, deposition rate, and amount. The {epsilon}-FeSi or {alpha}-FeSi{sub 2} nanodots were epitaxially grown in a dome shape with an average size of {approx}5 nm and an ultrahigh density (>10{sup 12} cm{sup -2}) on the surface. We formed {approx}2-nm high and {approx}8-nm wide {beta}-FeSi{sub 2} nanodots in a dome shape with a density of {approx}5x10{sup 11} cm{sup -2} on the surface. Cross-sectional TEM images revealed that the {beta}-FeSi{sub 2} growth continued beneath the Si surface. The part of the {beta}-FeSi{sub 2} nanodot beneath the surface was a disk shape, which was {approx}5 nm thick and {approx}20 nm wide, with an abrupt interface parallel to the Si (111) plane. The nanodots were epitaxially grown and had almost no misfit dislocations near the {beta}-FeSi{sub 2}/Si interface, which were strained by the lattice mismatch. The size distribution of the iron silicide dotsmore » was determined by Ostwald ripening with the activation energy of dot edge mobility of {approx}1.3 eV.« less |
| تدمد: | 1550-235X 1098-0121 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5afd5f5fcd09293168181b5ec5faf6fd https://doi.org/10.1103/physrevb.72.075404 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........5afd5f5fcd09293168181b5ec5faf6fd |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 1550235X 10980121 |
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