Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels
| العنوان: | Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels |
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| المؤلفون: | Chris Drijbooms, Denis Shamiryan, Peter Verheyen, Hans Weijtmans, Philip Absil, Chantal J. Arena, R. Wise, Sophie Passefort, Akira Inoue, Matty Caymax, John McCormack, Haruyuki Sorada, Alain Moussa, Roger Loo, Geert Eneman, Vladimir Machkaoutsan, Pierre Tomasini, Stephane Godny, Rita Rooyackers, Stefan Jakschik, Frederik Leys, Christian Walczyk, Byeong Chan Lee, Sangjin Hyun, Tinne Delande, Hugo Bender, Luc Geenen |
| المصدر: | ECS Transactions. 3:453-465 |
| بيانات النشر: | The Electrochemical Society, 2006. |
| سنة النشر: | 2006 |
| مصطلحات موضوعية: | Engineering, business.industry, North central, business, Engineering physics, PMOS logic |
| الوصف: | Selective Epitaxial Growth of SiGe and/or Si-cap/SiGe heterostructures offer an elegant way to improve pMOS device performance. This paper discusses some important challenges and characteristics of the corresponding epi process. Loading effects are strongly reduced by choosing the growth conditions away from the mass transport regime, i.e. by reducing the growth pressure and/or increasing the gas velocity. Anomalous SiGe thickening at convex corners of recessed areas and the impact of the underlying SiGe on the growth behavior during Si- capping are discussed as well. The limits of the chemical and thermal budgets during pre-epi treatments as defined by the device concepts require some process optimization but are not a show stopper. |
| تدمد: | 1938-6737 1938-5862 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5b5865cae7713a5efb7770e4b2dda609 https://doi.org/10.1149/1.2355843 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........5b5865cae7713a5efb7770e4b2dda609 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19386737 19385862 |
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