التفاصيل البيبلوغرافية
| العنوان: |
Induced defect levels of P and Al vacancy-complexes in 4H-SiC: A hybrid functional study |
| المؤلفون: |
Okikiola Olaniyan, Refilwe Edwin Mapasha, Emmanuel Igumbor, Ezekiel Omotoso, Walter E. Meyer, Helga T. Danga |
| المصدر: |
Materials Science in Semiconductor Processing. 89:77-84 |
| بيانات النشر: |
Elsevier BV, 2019. |
| سنة النشر: |
2019 |
| مصطلحات موضوعية: |
010302 applied physics, Materials science, Band gap, Mechanical Engineering, Doping, Wide-bandgap semiconductor, Foundation (engineering), 02 engineering and technology, Dielectric, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Engineering physics, Hybrid functional, chemistry.chemical_compound, chemistry, Mechanics of Materials, Vacancy defect, 0103 physical sciences, Silicon carbide, General Materials Science, 0210 nano-technology |
| الوصف: |
The National Research foundation (NRF) of South Africa (Grant specific unique reference number (UID) 98961). |
| تدمد: |
1369-8001 |
| URL الوصول: |
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9356145ce07e64ae7e6fd531911c22
https://doi.org/10.1016/j.mssp.2018.09.001 |
| حقوق: |
OPEN |
| رقم الأكسشن: |
edsair.doi...........5c9356145ce07e64ae7e6fd531911c22 |
| قاعدة البيانات: |
OpenAIRE |
