Homoepitaxially grown diamond film capacitor has been fabricated and tested for capacitance characteristics. Type IIa diamond was chosen for carbon ion implantation and subsequently microwave plasma CVD diamond was grown. CVD diamond film was separated from the base type IIa diamond substrate by using electrochemical bias. The separated CVD diamond film was annealed at 450°C for 2 h and metallized the film using a d.c. magnetron sputtering technique. The observed capacitance of the fabricated device is of the order of picofarads, close to the expected value of the capacitance.
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