n + -GaAs / p + -InAlGaP / n + -InAlGaP Camel-Gate High-Electron Mobility Transistors
| العنوان: | n + -GaAs / p + -InAlGaP / n + -InAlGaP Camel-Gate High-Electron Mobility Transistors |
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| المؤلفون: | Wei-Chou Hsu, Yu-Shyan Lin, Rong Tay Hsu, Yu Huei Wu, Tzong Bin Wang, Dong Hai Huang |
| المصدر: | Electrochemical and Solid-State Letters. 9:G37-G39 |
| بيانات النشر: | The Electrochemical Society, 2006. |
| سنة النشر: | 2006 |
| مصطلحات موضوعية: | Materials science, Band gap, business.industry, General Chemical Engineering, Transistor, Heterojunction, Nanotechnology, Gate voltage, law.invention, Metal, law, visual_art, Electrochemistry, visual_art.visual_art_medium, Breakdown voltage, Optoelectronics, General Materials Science, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, business, High electron, Voltage |
| الوصف: | This investigation proposes InAlGaP/InGaAs camel-gate high-electron mobility transistors with inverted δ-doping layers (CAM-HEMTs). CAM-HEMTs with various gate metals, including Au, Pt/Au, Ti/Au, and Ni/Au, are investigated. The CAM-HEMT with the Ni/Au gate metal exhibits the benefits of a large gate voltage swing (3.6 V), a high two-terminal gate-source breakdown voltage (>20 V), no bell-shaped gate current and temperature-insensitive threshold voltages. These characteristics are attributable to the inverted δ-doping layer, the large conduction-band discontinuity of the InAlGaP/InGaAs heterojunction, the large bandgap of InAlGaP and the high camel-gate barrier with the Ni/Au gate metal. |
| تدمد: | 1944-8775 1099-0062 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5cd788fc70596577d57699146cc96da9 https://doi.org/10.1149/1.2146717 |
| رقم الأكسشن: | edsair.doi...........5cd788fc70596577d57699146cc96da9 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19448775 10990062 |
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