High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics
| العنوان: | High-k dielectric materials for the gate oxide of a MIS capacitor: effect of interface states on the C–V characteristics |
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| المؤلفون: | Slah Hlali, Adel Kalboussi, Neila Hizem |
| المصدر: | Journal of Computational Electronics. 15:1340-1350 |
| بيانات النشر: | Springer Science and Business Media LLC, 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Condensed matter physics, Charge (physics), 02 engineering and technology, Electron, Low frequency, 021001 nanoscience & nanotechnology, 01 natural sciences, MIS capacitor, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Threshold voltage, Capacitor, law, Gate oxide, Modeling and Simulation, 0103 physical sciences, Electrical and Electronic Engineering, 0210 nano-technology, High-κ dielectric |
| الوصف: | The capacitance-voltage (C---V) characteristics of metal-insulator-semiconductor (MIS) capacitors are investigated by solving in 1D the self-consistent equations using the Silvaco ATLAS device simulation package. In this paper, ambient and high temperature C---V characteristics for both positive and negative interface charge densities are studied. The results obtained from the simulation show that the C---V characteristics at ambient temperature change from high frequency to a low frequency for $$D_\mathrm{it} > \hbox {1e12}\, \hbox {cm}^{-2}\,\hbox {eV}^{-1}$$Dit>1e12cm-2eV-1. We find that the shift in threshold voltage has a strong dependence on the positive and negative interface charge densities. Also, a less significant shift in threshold voltage for the highest temperature operation is found which is in the opposite direction for negative and positive interface charge densities. Electrons and holes that occupy interface traps become charged and contribute to the threshold voltage shift and a hump in the C---V characteristics. |
| تدمد: | 1572-8137 1569-8025 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5cfda7ef7ee039e1e076c9e4450b6336 https://doi.org/10.1007/s10825-016-0916-0 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........5cfda7ef7ee039e1e076c9e4450b6336 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 15728137 15698025 |
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