Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes
| العنوان: | Numerical Investigation on the Carrier Transport Characteristics of AlGaN Deep-UV Light-Emitting Diodes |
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| المؤلفون: | Jih-Yuan Chang, Fang-Ming Chen, Yen-Kuang Kuo, Hui-Tzu Chang, Ya-Hsuan Shih |
| المصدر: | IEEE Journal of Quantum Electronics. 52:1-5 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2016. |
| سنة النشر: | 2016 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, business.industry, Slope efficiency, Wide-bandgap semiconductor, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, law.invention, law, 0103 physical sciences, Rectangular potential barrier, Optoelectronics, Electrical and Electronic Engineering, 0210 nano-technology, Polarization (electrochemistry), business, Current density, Layer (electronics), Diode, Light-emitting diode |
| الوصف: | Carrier transport characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (LEDs) are theoretically investigated. Simulation results reveal that hole transport/injection may be severely obstructed by the large potential barrier at the p- electron-blocking layer/p-GaN interface. Under this circumstance, the slope efficiency degrades and electron leakage increases accordingly. By inserting the AlGaN interlayers to form band-engineered staircase p-region, both the transport/injection of holes and $I$ – $V$ characteristic are improved. Moreover, the LED characteristics become less sensitive to the polarization field, which is beneficial for obtaining high LED performance with the LED of high crystalline quality. |
| تدمد: | 1558-1713 0018-9197 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::5ed030d6931fff2d9064821c03c01f29 https://doi.org/10.1109/jqe.2016.2535252 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........5ed030d6931fff2d9064821c03c01f29 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581713 00189197 |
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