Al2+ (320 keV) ions were implanted at room temperature into p-type (1 1 1)-Hg0.78Cd0.22Te with fluences ranging from 3 × 1011 to 3 × 1014 cm−2. The implanted samples were analyzed by infrared reflectivity and by diffuse X-ray scattering. These two contactless and non-destructive techniques provide quantitative results on free carriers and on structural defects which are induced by ion implantation into p-type (1 1 1)-Hg0.78Cd0.22Te. Comparison between the evolution of the free carrier concentration and the evolution of the structural defects with increasing the fluence suggests that extended structural defects directly influence the doping concentration in as-implanted samples.
