29th European Photovoltaic Solar Energy Conference and Exhibition; 1614-1619 On the way to develop a very thin and highly efficient triple-junction thin-film solar cell in a-Si:H/ μc-Si:H/μc-SiGe:H configuration cell samples were prepared and characterized using an industrial relevant 13.56 MHz 0.5 nm/s process on 30 30 cm² PECVD tool. In order to improve the μc-SiGe:H absorbers single junction cells were processed carefully monitoring germanium content and crystallinity while varying pressure and germane flow. Homogeneity test on 30 cm x 30 cm deposition area were performed resulting in a good homogeneity for the thickness. Triple junction cells were fabricated by depositing μc-Si:H and μc-SiGe:H absorbers on state of the art tandem structures managed to reach 12.2 % efficiency. Our intention is to develop an industrial relevant process with attractive fabrication times by benefiting from the enhanced absorption of μc-SiGe:H compared to μc-Si:H.
