AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs
| العنوان: | AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs |
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| المؤلفون: | Brecht DeVos, P. K. Kandaswamy, Marleen Van Hove, Ming Zhao, Eric Carlson, Olivier Richard, Barun Dutta, S.B. Thapa, Hu Liang, E. Vancoille, Saripalli Yoga |
| المصدر: | physica status solidi c. 11:450-453 |
| بيانات النشر: | Wiley, 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Materials science, Silicon, business.industry, Nucleation, chemistry.chemical_element, Nanotechnology, Gallium nitride, Condensed Matter Physics, Epitaxy, Crystal, chemistry.chemical_compound, chemistry, CMOS, Optoelectronics, Wafer, Metalorganic vapour phase epitaxy, business |
| الوصف: | In GaN-on-silicon there are many challenges which are currently encountered when making this technology compatible with standard Si-CMOS fabs especially the bow. Bringing this technology to CMOS fabs can potentially drive the costs down, in addition to the cost advantage expected from large wafer sizes. We report here on the impact of AlN nucleation layer on crystal quality and bow. The focus will be on V/III ratios and pre-dose conditions for AlN, which have considerable effect on the AlN/AlGaN/GaN buffer structures. We will also discuss how AlN thickness can be used to tune the bow. Finally, a brief description on the effect of surface pits will be presented.(© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| تدمد: | 1610-1642 1862-6351 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::62ee8ad0a3fc2989578c81d39cb3d40a https://doi.org/10.1002/pssc.201300524 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........62ee8ad0a3fc2989578c81d39cb3d40a |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 16101642 18626351 |
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