Microscopic and macroscopic investigation of electrical contacts to n type and p type ZnSe
| العنوان: | Microscopic and macroscopic investigation of electrical contacts to n type and p type ZnSe |
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| المؤلفون: | Kevin Alan Prior, B. C. Cavenett, I. M. Dharmadasa, E. Ajustron, Roland Coratger, C.J. Blomfield, J. Simpson, J. Beauvillain |
| المصدر: | Materials Science and Technology. 12:86-89 |
| بيانات النشر: | Informa UK Limited, 1996. |
| سنة النشر: | 1996 |
| مصطلحات موضوعية: | Materials science, Mechanical Engineering, Schottky barrier, Analytical chemistry, Condensed Matter Physics, Isotropic etching, Electrical contacts, Vacuum evaporation, Metal, X-ray photoelectron spectroscopy, Mechanics of Materials, visual_art, visual_art.visual_art_medium, General Materials Science, Thin film, Stoichiometry |
| الوصف: | Surface preparation methods were established using wet chemical etching of ZnSe epilayers and the stoichiometry of the resulting surfaces was studied using X-ray photoelectron spectroscopy. It is found that the stoichiometry of the surface is very sensitive to the chemical treatment and surfaces can be produced that are rich in either Se or Zn. Electrical contacts were fabricated by vacuum evaporation of Ag, Sb, or Au on to nearly stoichiometric surfaces. Electrical properties were studied using the current-voltage technique and it has been found that the Schottky barrier heights measured vary from contact to contact, although the processing and metal used are identical. Discrete barrier heights of 1.67, 1.48, 1.20, and 0.90 eV are observed for metal/n-ZnSe contacts using the three metals studied. The first two barrier heights, 1.67 and 1.48 eV, are identical to those reported in the literature. Aging effects of current-voltage characteristics were also monitored and it was observed that the barrier height varies with time, showing one of the four values mentioned above. Ballistic electron emission miscroscopy carried out on 1.67 eV barrier contacts confirms the accuracy of the current-voltage barrier height determinations. Electrical properties of meal/p-ZnSe contacts are also presented and their aging effects discussed. (C) 1996 The Institute of Materials. |
| تدمد: | 1743-2847 0267-0836 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::63666cd11d0f175bced29d77990697a2 https://doi.org/10.1179/mst.1996.12.1.86 |
| رقم الأكسشن: | edsair.doi...........63666cd11d0f175bced29d77990697a2 |
| قاعدة البيانات: | OpenAIRE |
PDF full text from Publisher | تدمد: | 17432847 02670836 |
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