Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications
| العنوان: | Trigated Poly-Si Nanowire SONOS Devices for Flat-Panel Applications |
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| المؤلفون: | Chuan-Ding Lin, Hsing-Hui Hsu, Ta-Wei Liu, Horng-Chih Lin, Tiao-Yuan Huang |
| المصدر: | IEEE Transactions on Nanotechnology. 9:386-391 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2010. |
| سنة النشر: | 2010 |
| مصطلحات موضوعية: | Hardware_MEMORYSTRUCTURES, Materials science, business.industry, Transistor, Gate dielectric, Nanowire, Hardware_PERFORMANCEANDRELIABILITY, Computer Science Applications, Threshold voltage, law.invention, Non-volatile memory, Stack (abstract data type), Thin-film transistor, law, Hardware_INTEGRATEDCIRCUITS, Electronic engineering, Optoelectronics, Field-effect transistor, Electrical and Electronic Engineering, business, Hardware_LOGICDESIGN |
| الوصف: | A new method is proposed and demonstrated to fabricate planar thin-film transistors and trigated nanowire (NW) devices simultaneously on the same panel. By using an oxide-nitride-oxide stack as the gate dielectric, the NW devices could also serve as nonvolatile Si-oxide-nitride-oxide-Si (SONOS) memory devices. Our results indicate that the combination of trigate and NW channels help to improve the device performance in terms of steppers subthreshold swing and reduced threshold voltage. Improvement in programming and erasing efficiency of the nonvolatile SONOS memory devices is also demonstrated with the trigated NW structure. |
| تدمد: | 1941-0085 1536-125X |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::67b2db67abc84b55d20bf650c21e363d https://doi.org/10.1109/tnano.2009.2029573 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........67b2db67abc84b55d20bf650c21e363d |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19410085 1536125X |
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