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Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory

التفاصيل البيبلوغرافية
العنوان: Solution for PCM and OTS Intermixing on Cross-Point Phase Change Memory
المؤلفون: Erh-Kun Lai, Robert L. Bruce, Huai-Yu Cheng, Fabio Carta, H.L. Lung, Wanki Kim, Lynne Gignac, Cheng-Wei Cheng, C. W. Yeh, Matthew J. BrightSky, Hiroyuki Miyazoe, Nanbo Gong, Asit Kumar Ray, Kuo I-Ting, Wei-Chih Chien, C. H. Yang, John M. Papalia
المصدر: 2019 IEEE 11th International Memory Workshop (IMW).
بيانات النشر: IEEE, 2019.
سنة النشر: 2019
مصطلحات موضوعية: Phase-change memory, business.industry, Annealing (metallurgy), Reliability study, Optoelectronics, Degradation (geology), Cross point, Thermal treatment, business, Layer (electronics), Threshold voltage
الوصف: A reliability study for PCM and OTS intermixing was addressed. The buffer layer between PCM and OTS plays a key role in preventing PCM/OTS intermixing after BEOL processing thermal treatment. Besides cycling endurance, performance degradation due to interlayer intermixing was observed. Optimal device operation and an improved buffer layer allowed drastically improved cycling endurance from a few cycles to > 1E9 cycles.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::67b5a2c530a6a6f4b666c01999293fb1
https://doi.org/10.1109/imw.2019.8739648
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........67b5a2c530a6a6f4b666c01999293fb1
قاعدة البيانات: OpenAIRE
الوصف
الوصف غير متاح.