A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond
| العنوان: | A Low-Power HKMG CMOS Platform Compatible With Dram Node 2× and Beyond |
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| المؤلفون: | Pierre C. Fazan, Romain Ritzenthaler, Johan Albert, Vasile Paraschiv, Wilfried Vandervorst, E. Vecchio, Aftab Nazir, Efrain Altamirano-Sanchez, Geert Schoofs, Nadine Collaert, H.-J. Na, Sun-Ghil Lee, F. Sebai, Thomas Kauerauf, Naoto Horiguchi, Y. Son, Moon Ju Cho, Alexey Milenin, Alessio Spessot, Bastien Douhard, Marc Aoulaiche, K. B. Noh, Aaron Thean, Christian Caillat, Soon Aik Chew, Tom Schram |
| المصدر: | IEEE Transactions on Electron Devices. 61:2935-2943 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2014. |
| سنة النشر: | 2014 |
| مصطلحات موضوعية: | Dynamic random-access memory, Materials science, business.industry, Depletion-load NMOS logic, Electrical engineering, Hardware_PERFORMANCEANDRELIABILITY, Electronic, Optical and Magnetic Materials, law.invention, PMOS logic, CMOS, Stack (abstract data type), law, Hardware_INTEGRATEDCIRCUITS, Optoelectronics, Node (circuits), Electrical and Electronic Engineering, business, NMOS logic, Dram, Hardware_LOGICDESIGN |
| الوصف: | In this paper, a low-cost and low-leakage gate-first high-k metal-gate CMOS integration compatible with the high thermal budget used in a 2× node dynamic random access memory process flow is reported. The metal inserted polysilicon stack is based on HfO 2 coupled with Al 2 O 3 capping for pMOS devices, and with a TiN/Mg/TiN stack together with As ion implantation for nMOS. It is demonstrated that n and pMOS performance of 400 and 200 μA/μm can be obtained for an OFF-state current of 10 -10 A/μm, while maintaining gate and junction leakages compatible with low-power applications. Reliability and matching properties are aligned with logic gate-stacks, and the proposed solution is outperforming the La-cap-based solutions in terms of thermal stability. |
| تدمد: | 1557-9646 0018-9383 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::68e343e06c7a32bba61fb08b88fa37e4 https://doi.org/10.1109/ted.2014.2331371 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........68e343e06c7a32bba61fb08b88fa37e4 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15579646 00189383 |
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