Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique II. Growth velocity and applied magnetic field transients
التفاصيل البيبلوغرافية
العنوان:
Oxygen partitioning analysis during Czochralski silicon crystal growth via a dopant marker and a simple transfer function modeling technique II. Growth velocity and applied magnetic field transients
Intermediate transient oxygen redistribution during commercial size scale Czochralski silicon crystal growth caused by a step change in crystal growth velocity and applied magnetic field has been examined using the dopant marker/transfer function modeling technique. A single oxygen species in the melt is unable to fit the experimental data. However, a model based upon two oxygen species, SiO4 tetrahedra and O monomer, with kO0 > 1 and kSiO40 « 1 plus a melt reaction, SiO4 ↔ Si + 4O, is able to provide good fit to the data. Such a two oxygen species model yields an effective partition coefficient for oxygen greater than or less than unity depending upon the particular set of melt and crystal growth conditions.
