Anew experimental method of studying shifts between concentration-versus-depth profiles of vacancy-type and interstitial-type defects in ion-implanted silicon is demonstrated. The concept is based on deep level transient spectroscopy (DLTS) measurements utilizing the filling pulse variation technique. The vacancy profile, represented by the vacancy-oxygen center and the interstitial profile, represented by the substitutional carbon-interstitial carbon pair, are obtained at the same sample temperature by varying the duration of the filling pulse. Thus the two profiles can be recorded with a high relative depth resolution. Point defects have been introduced in low doped float zone n-type silicon by implantation with 6 MeV boron ions and 1.3 MeV protons at room temperature, using low doses. For each implantation condition the peak of the interstitial profile is shown to be displaced by � 0:5 lm towards larger depths compared to that of the vacancy profile. This shift is primarily attributed to the preferential forward momentum of recoiling Si atoms, in accordance with theoretical predictions. 2002 Elsevier Science B.V. All rights reserved.
