Proton degradation of light-emitting diodes
| العنوان: | Proton degradation of light-emitting diodes |
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| المؤلفون: | Bernard G. Rax, C.E. Barnes, L.E. Selva, Allan H. Johnston |
| المصدر: | IEEE Transactions on Nuclear Science. 46:1781-1789 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 1999. |
| سنة النشر: | 1999 |
| مصطلحات موضوعية: | Nuclear and High Energy Physics, Materials science, Proton, Dopant, business.industry, Annealing (metallurgy), law.invention, Wavelength, Nuclear Energy and Engineering, law, Optoelectronics, Electrical and Electronic Engineering, Homojunction, Photonics, business, Diode, Light-emitting diode |
| الوصف: | Proton degradation is investigated for several types of light-emitting diodes with wavelengths in the near infrared region. Several basic light-emitting diode (LED) technologies are compared, including homojunction and double-heterojunction devices. Homojunction LEDs fabricated with amphoteric dopants are far more sensitive to displacement damage than double-heterojunction LEDs, and are strongly affected by injection-enhanced annealing. Unit-to-unit variability remains an important issue for all LED technologies. For technologies, degradation of the forward voltage characteristics appears to be more significant than degradation of light output. |
| تدمد: | 1558-1578 0018-9499 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::6d447870dbf1c573e536884a184479b8 https://doi.org/10.1109/23.819154 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........6d447870dbf1c573e536884a184479b8 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 15581578 00189499 |
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