Plasma and Annealing Treatments to Form Height-Barrier Ni-Based Schottky Contact to n-GaN
| العنوان: | Plasma and Annealing Treatments to Form Height-Barrier Ni-Based Schottky Contact to n-GaN |
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| المؤلفون: | Hyeong Seop Im, Tae Yeon Seong, Tae Ju Lee |
| المصدر: | ECS Journal of Solid State Science and Technology. 8:Q194-Q199 |
| بيانات النشر: | The Electrochemical Society, 2019. |
| سنة النشر: | 2019 |
| مصطلحات موضوعية: | Materials science, Annealing (metallurgy), business.industry, Schottky barrier, Optoelectronics, Plasma, business, Electronic, Optical and Magnetic Materials |
| تدمد: | 2162-8777 2162-8769 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::71a568f9ff01905be88e0d17c70789fe https://doi.org/10.1149/2.0121910jss |
| رقم الأكسشن: | edsair.doi...........71a568f9ff01905be88e0d17c70789fe |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21628777 21628769 |
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