Fabrication processing of ZnO-Based LEDs
| العنوان: | Fabrication processing of ZnO-Based LEDs |
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| المؤلفون: | David Norton, S. N. G. Chu, Soohwan Jang, Brent P. Gila, J. W. Dong, Andrei Osinsky, S. Rawal, Travis J. Anderson, Jau-Jiun Chen, Stephen J. Pearton, Yuanjie Li, Hyun-Sik Kim, Ren Fan |
| المصدر: | ECS Transactions. 2:153-172 |
| بيانات النشر: | The Electrochemical Society, 2006. |
| سنة النشر: | 2006 |
| مصطلحات موضوعية: | Materials science, Fabrication, law, business.industry, Optoelectronics, business, Light-emitting diode, law.invention |
| الوصف: | To create efficient ZnO-based LEDs, it is important to develop practical etching process and optimize Ohmic contacts on ZnO. Wet etch rates at 25{degree sign}C for Zn0.95Cd0.05O grown on sapphire substrates by rf plasma-assisted molecular beam epitaxy were in the range 30-90 nm min-1 using HCl/H2O and H3PO4/H2O (2x10- 3-3.5x10-3 M) solutions. A comparison of Ti/Al/Pt/Au and Ti/Au Ohmic contacts on n-type Zn0.95Cd0.05O layers grown on ZnO buffer layers with GaN/sapphire templates shows a minimum contact resistivity of 2.3x10-4 Ω-cm2 obtained at 500{degree sign}C for Ti/Al/Pt/Au and 1.6x10-4 Ω-cm2 was obtained at 450{degree sign} C for Ti/Au. Ti/Au Ohmic contacts on heavily Al-doped (n~1019 cm-3) n-ZnO produce a low specific contact resistivity of 2.4x10-7 Ω- cm2 in the as-deposited condition and extremely low minimum values of 6x10-8 Ω-cm2 after annealing at 300{degree sign}C. |
| تدمد: | 1938-6737 1938-5862 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::71d135d7535d9451518981a8e3cfb482 https://doi.org/10.1149/1.2204888 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........71d135d7535d9451518981a8e3cfb482 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 19386737 19385862 |
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