Enhanced optoelectronics performances of multilayer Sb0.1Mo0.9Se2/SnSe2 heterostructure
| العنوان: | Enhanced optoelectronics performances of multilayer Sb0.1Mo0.9Se2/SnSe2 heterostructure |
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| المؤلفون: | Vivek M. Pathak, Salil Nair, Som Narayan, Vijay Dixit, C. U. Vyas, Gunvant K. Solanki, Jolly Joy, Prafulla K. Jha |
| المصدر: | Journal of Materials Science: Materials in Electronics. 32:28739-28749 |
| بيانات النشر: | Springer Science and Business Media LLC, 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | Materials science, Photoluminescence, business.industry, Scanning electron microscope, Band gap, Heterojunction, Condensed Matter Physics, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Crystal, symbols.namesake, Saturation current, symbols, Optoelectronics, Electrical and Electronic Engineering, business, Spectroscopy, Raman spectroscopy |
| الوصف: | In the present investigation, Sb0.1Mo0.9Se2 single crystals belonging to semiconductor-layered transition metal di-chalcogenides (SLTMDCs) are grown by direct vapor transport (DVT) technique in a dual-zone furnace. The surface topographic properties of exfoliated crystals are studied under an optical microscope and scanning electron microscopy (SEM). The SEM analysis reveals the presence of hexagonal particles. The direct optical energy band gap of exfoliated crystal, 1.44 eV, is obtained by UV–visible spectroscopy. The photoluminescence (PL) and Raman spectroscopy are employed to elucidate the excitonic mechanism and vibrational properties. The semiconducting behavior of exfoliated crystals is examined by high-temperature resistivity. Heterostructure devices of thin-film SnSe2/Sb0.1Mo0.9Se2 crystal are prepared to study its rectifying nature. The diode parameter such as ideality factor, saturation current, and barrier potential is evaluated by Ln I–V technique. The photoconduction property of the fabricated device along the ab-plane is recorded under a polychromatic source of intensity 30 mW cm−2. The photo-detecting properties such as responsivity (149 mA W−1) and detectivity (108 Jones) are determined to evince the excellent photodetection property of detector at 800 mV and 1200 mV bias voltages, respectively. |
| تدمد: | 1573-482X 0957-4522 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::72891ec58b493b050583a7f5b4da7e06 https://doi.org/10.1007/s10854-021-07256-9 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........72891ec58b493b050583a7f5b4da7e06 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 1573482X 09574522 |
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