Local stress analysis of partial dislocation interactions with symmetrical-tilt grain boundaries containing E-structural units

التفاصيل البيبلوغرافية
العنوان: Local stress analysis of partial dislocation interactions with symmetrical-tilt grain boundaries containing E-structural units
المؤلفون: Huck Beng Chew, Ruizhi Li, Sivasakthya Mohan
المصدر: Philosophical Magazine. 98:2345-2366
بيانات النشر: Informa UK Limited, 2018.
سنة النشر: 2018
مصطلحات موضوعية: 010302 applied physics, Materials science, Condensed matter physics, Boundary (topology), 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Stress (mechanics), Molecular dynamics, Compressive strength, Tension (geology), 0103 physical sciences, Ultimate tensile strength, Partial dislocations, Grain boundary, 0210 nano-technology
الوصف: Grain boundaries containing porous E-structural units (SUs) are known to readily emit dislocations under tension. Using molecular dynamics simulations, we study the interactions between {111} Shockley partial dislocations and symmetrical-tilt Ni grain boundaries containing E-SUs. We show that the incoming Shockley partials can be accommodated by porous E-SUs along the grain boundary. However, the partial-absorption process disrupts the short-range interactions of incipient dislocations along the boundary, which generates high local tensile and compressive stress regimes emanating from the impingement sites. For the favoured grain boundary comprising only of E-SUs, incipient Shockley partials originating from E-SUs located within the tensile stress regime are subsequently re-emitted into the neighbouring grain. We demonstrate that the critical strength for re-emission of Shockley partials can be delineated into contributions from tensile stress generated by partial-absorption, intrinsic ...
تدمد: 1478-6443
1478-6435
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::72ab137afe05238f53ee43b10ca6032d
https://doi.org/10.1080/14786435.2018.1486049
رقم الأكسشن: edsair.doi...........72ab137afe05238f53ee43b10ca6032d
قاعدة البيانات: OpenAIRE