Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films
| العنوان: | Electron delocalization and relaxation behavior in Cu-doped Bi2Se3 films |
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| المؤلفون: | Zhen-Hua Wang, Zhidong Zhang, Q. R. Yao, Li Mingze, Liang Yang, Da Li, G. H. Rao, Xuan P. A. Gao |
| المصدر: | Physical Review B. 96 |
| بيانات النشر: | American Physical Society (APS), 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | Physics, Superconductivity, Electron delocalization, 02 engineering and technology, Cu doped, 021001 nanoscience & nanotechnology, 01 natural sciences, Relaxation behavior, Crystallography, Condensed Matter::Superconductivity, 0103 physical sciences, 010306 general physics, 0210 nano-technology, Conduction band |
| الوصف: | $\mathrm{C}{\mathrm{u}}_{x}\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ is known for superconductivity due to Cu intercalation in the van der Waals gaps between the quintuple layers of $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ at $xg0.10$. Here we report the synthesis and transport properties of Cu-doped $\mathrm{C}{\mathrm{u}}_{x}\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ films prepared by the chemical-vapor-deposition (CVD) method with $0.11\ensuremath{\ge}x\ensuremath{\ge}0$. It is found that the insulatinglike temperature-dependent resistivity of polycrystalline $\mathrm{C}{\mathrm{u}}_{x}\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ films exhibits a marked metallic downturn and an increase of carrier concentration below \ensuremath{\sim}37 K. There is also a time-dependent slow relaxation behavior in the resistance at low temperature. These effects might be related to the strong hybridization between $\mathrm{C}{\mathrm{u}}^{+}$ and $\mathrm{C}{\mathrm{u}}^{2+}$ conduction bands from the intercalated $\mathrm{C}{\mathrm{u}}^{+}$ and substituted $\mathrm{C}{\mathrm{u}}^{2+}$ sites in $\mathrm{B}{\mathrm{i}}_{2}\mathrm{S}{\mathrm{e}}_{3}$ films. The findings here have important implications for the understanding and development of doping-induced superconductivity in topological insulators. |
| تدمد: | 2469-9969 2469-9950 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::736dd90575d8b94fe2dc4eaf9e5a6b61 https://doi.org/10.1103/physrevb.96.075152 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........736dd90575d8b94fe2dc4eaf9e5a6b61 |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 24699969 24699950 |
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