Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
| العنوان: | Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact |
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| المؤلفون: | Hokyun Ahn, Jae-Won Do, Hyun-Wook Jung, Jong-Won Lim, Haecheon Kim, Sung-Jae Chang |
| المصدر: | Journal of the Korean Physical Society. 76:837-842 |
| بيانات النشر: | Korean Physical Society, 2020. |
| سنة النشر: | 2020 |
| مصطلحات موضوعية: | 010302 applied physics, Tetramethylammonium hydroxide, Fabrication, Materials science, Scanning electron microscope, business.industry, Annealing (metallurgy), General Physics and Astronomy, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, chemistry.chemical_compound, chemistry, Transmission electron microscopy, 0103 physical sciences, Optoelectronics, 0210 nano-technology, business, Contact area, Ohmic contact |
| الوصف: | Ohmic contacts are formed by recess etching the source and the drain regions with line and dot patterns of a few hundred nanometers on an AlGaN/GaN heterostructure and treating the surface with tetramethylammonium hydroxide (TMAH) prior to ohmic metal deposition. Electrical characterizations show that ohmic behavior is obtained at a low annealing temperature of 700 ◦ C as the direct contact area to the two-dimensional electron gas (2DEG) is increased via the etched patterns, and the ohmic contact is further improved when the interface is treated with TMAH. The analyses based on transmission electron microscopy, scanning electron microscopy, energy dispersive X-ray spectroscopy, and atomic force microcopy confirm the presence of an improved ohmic contact interface and morphology, suggesting a novel and viable route towards the fabrication of AlGaN/GaN-based devices with improved controllability and reliability. |
| تدمد: | 1976-8524 0374-4884 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::74f8ba7d4944a2ae1f3bea33f99ebbb1 https://doi.org/10.3938/jkps.76.837 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........74f8ba7d4944a2ae1f3bea33f99ebbb1 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 19768524 03744884 |
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