Formation of nanosized relief on PbTe and Pb1−xSnxTe substrates surface during nonabrasive chemical–mechanical polishing by (H2O2 + HBr + ethylene glycol)/glycerol etchant compositions

التفاصيل البيبلوغرافية
العنوان: Formation of nanosized relief on PbTe and Pb1−xSnxTe substrates surface during nonabrasive chemical–mechanical polishing by (H2O2 + HBr + ethylene glycol)/glycerol etchant compositions
المؤلفون: G. P. Malanych, A. A. Korchovyi, V. M. Tomashyk
المصدر: Applied Nanoscience. 10:4637-4643
بيانات النشر: Springer Science and Business Media LLC, 2020.
سنة النشر: 2020
مصطلحات موضوعية: Materials science, Materials Science (miscellaneous), Polishing, 02 engineering and technology, Cell Biology, 010402 general chemistry, 021001 nanoscience & nanotechnology, 01 natural sciences, Isotropic etching, Microanalysis, Atomic and Molecular Physics, and Optics, 0104 chemical sciences, Crystal, chemistry.chemical_compound, chemistry, Chemical engineering, Chemical-mechanical planarization, Electrical and Electronic Engineering, Physical and Theoretical Chemistry, 0210 nano-technology, Ethylene glycol, Biotechnology, Solid solution, Surface states
الوصف: The process of cutting, mechanical and chemical treatment of the PbTe and Pb1−xSnxTe crystal surface has been studied. The dependences of the chemical–mechanical polishing rate versus the dilution of the basic polishing etchant H2O2 + HBr + ethylene glycol by the glycerol have been determined. The etchant compositions are selected to implement controllable removal of semiconductors layers at a rate of 1–185 μm min−1, with such quality of the single crystals surface that allows the subsequent procedures specified by planar technology and the microscopic structural studies. The surface states after chemical etching have been investigated using electron, metallographic and atomic force microscopy. Using X-ray microanalysis, we have monitored the concentrations of the host elements (Pb and Te) and possible contamination with chemical compounds present in the etchants and the solutions used to rinse the samples. It was shown that the surface state is improved after chemical etching.
تدمد: 2190-5517
2190-5509
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::77443f0788116388710880f5922c1c3d
https://doi.org/10.1007/s13204-020-01303-3
حقوق: CLOSED
رقم الأكسشن: edsair.doi...........77443f0788116388710880f5922c1c3d
قاعدة البيانات: OpenAIRE