Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions
| العنوان: | Charge density at the Al2O3/Si interface in Metal–lnsulator–Semiconductor devices: Semiclassical and quantum mechanical descriptions |
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| المؤلفون: | Neila Hizem, Adel Kalboussi, Slah Hlali |
| المصدر: | Semiconductors. 51:1625-1633 |
| بيانات النشر: | Pleiades Publishing Ltd, 2017. |
| سنة النشر: | 2017 |
| مصطلحات موضوعية: | 010302 applied physics, Electron density, Materials science, Silicon, Condensed matter physics, Charge density, chemistry.chemical_element, Semiclassical physics, 02 engineering and technology, Semiconductor device, Electron, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 01 natural sciences, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, 0103 physical sciences, 0210 nano-technology, Wave function, Quantum |
| الوصف: | In this paper, a quantum correction computation of the inversion layer of charge density was investigated. This study is carried out for a one-dimensional Metal–lnsulator–Semiconductor (MIS) structure with (100) oriented P-type silicon as substrate. The purpose of this paper is to point out the differences between the semiclassical and quantum-mechanical charge description at the interface Al2O3/Si, and to identify some electronic properties of our MIS device using different thickness of the high-k oxide and diverse temperature with different carrier statitics (Fermi–Dirak statitics and Boltzmann statitics). In particular, the calculations of capacitance voltage (C–V), sheet electron density, a relative position of subband energies and their wave functions are performed to examine qualitatively and quantitatively the electron states and charging mechanisms in our device. |
| تدمد: | 1090-6479 1063-7826 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::774c2a5a7762b951e977627e7592bde8 https://doi.org/10.1134/s1063782617120089 |
| حقوق: | CLOSED |
| رقم الأكسشن: | edsair.doi...........774c2a5a7762b951e977627e7592bde8 |
| قاعدة البيانات: | OpenAIRE |
Find this article in full text from Springer Verlag. | تدمد: | 10906479 10637826 |
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