Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs0.75P0.25/Si Tandem Solar Cells
| العنوان: | Metamorphic Tunnel Junctions Grown Via MOCVD Designed for GaAs0.75P0.25/Si Tandem Solar Cells |
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| المؤلفون: | Jacob T. Boyer, Steven A. Ringel, Daniel J. Chmielewski, Tyler J. Grassman, Daniel L. Lepkowski |
| المصدر: | IEEE Journal of Photovoltaics. 11:408-414 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE), 2021. |
| سنة النشر: | 2021 |
| مصطلحات موضوعية: | 010302 applied physics, Materials science, Equivalent series resistance, business.industry, Doping, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Epitaxy, 01 natural sciences, Electronic, Optical and Magnetic Materials, Gallium arsenide, chemistry.chemical_compound, chemistry, Tunnel junction, 0103 physical sciences, Tunnel diode, Optoelectronics, Metalorganic vapour phase epitaxy, Electrical and Electronic Engineering, 0210 nano-technology, business |
| الوصف: | A high-performance metamorphic Al0.2Ga0.8As0.75P0.25/GaAs0.75P0.25 heterojunction tunnel junction structure was developed for application to monolithic epitaxial GaAs0.75P0.25/Si 1.7 eV/1.1 eV bandgap tandem solar cells produced via metal-organic chemical vapor deposition. Doping optimization focused on both bulk doping concentrations and mitigating the transient incorporation effects that otherwise causes nonabrupt doping profiles in the Te doped layer. These efforts resulted in a fully relaxed metamorphic tunnel diode at the target lattice constant having a peak tunneling current density ( J P) of 279.1 A·cm−2 and a zero-bias resistance-area product (RA) of 3.0 × 10−4 Ω·cm2. After postgrowth annealing to emulate the thermal load of the GaAs0.75P0.25 top cell growth and elimination of the performance-enhancing carbon activation anneal, the device achieved J P = 13.1 A·cm−2 and RA = 1.5 × 10−3 Ω·cm2. These worst-case values are very promising as they enable the operation of GaAs0.75P0.25/Si tandems under one-sun AM1.5G illumination with negligible series resistance and at AM1.5D concentrations up to 240 suns with only 0.1% absolute efficiency loss. |
| تدمد: | 2156-3403 2156-3381 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::792696cf4ff0e54f182e2cf1df8dc6eb https://doi.org/10.1109/jphotov.2021.3052773 |
| حقوق: | OPEN |
| رقم الأكسشن: | edsair.doi...........792696cf4ff0e54f182e2cf1df8dc6eb |
| قاعدة البيانات: | OpenAIRE |
| تدمد: | 21563403 21563381 |
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