A review of radiation effects in heterojunction bipolar transistors
| العنوان: | A review of radiation effects in heterojunction bipolar transistors |
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| المؤلفون: | B. D. Weaver |
| المصدر: | Radiation Effects and Defects in Solids. 160:425-430 |
| بيانات النشر: | Informa UK Limited, 2005. |
| سنة النشر: | 2005 |
| مصطلحات موضوعية: | Nuclear and High Energy Physics, Radiation, Materials science, Input offset voltage, business.industry, Heterojunction bipolar transistor, Bipolar junction transistor, Transistor, Heterojunction, Hardware_PERFORMANCEANDRELIABILITY, Condensed Matter Physics, Non-ionizing radiation, Ionizing radiation, law.invention, law, Optoelectronics, General Materials Science, business |
| الوصف: | We present a review of radiation effects studies on heterojunction bipolar transistors (HBTs) in order to develop a framework for qualifying devices for application in the harsh radiation environment of space. Radiation effects in different HBT material systems are considered here, including Si/SiGe, GaAs/AlGaAs, and InP/InGaAs. We discuss the different effects of ionizing and nonionizing radiation on device performance and review the strong role that device geometry plays in determining the overall radiation tolerance. We present a new comparison of radiation tolerance in conventional transistors, HBTs, and high electron mobility transistors. Finally, we conclude that with proper design, HBTs are excellent candidates for application in space. |
| تدمد: | 1029-4953 1042-0150 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7926f0c4b01a1f3252d90bf4d4fd7c9d https://doi.org/10.1080/14622200500495028 |
| رقم الأكسشن: | edsair.doi...........7926f0c4b01a1f3252d90bf4d4fd7c9d |
| قاعدة البيانات: | OpenAIRE |
PDF full text from Publisher | تدمد: | 10294953 10420150 |
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