With the advent of the Internet of Things (IoT), applications such as flexible electronics, optoelectronics, self and low power electronics, and neuromorphic electronics are emerging rapidly, two dimensional (2D) layered materials such as molybdenum disulfide (MoS 2 ) have shown great potential and are called to have a major role in these areas. However, low cost and high yield synthesis of 2D materials is critical towards their commercial implementation. Here, we present a chemical vapor deposition (CVD) process for the synthesis of MoS 2 films using novel precursors with low sublimations point, which enables a fast and low temperature growth of crystalline 2D MoS 2 films greatly reducing the process cost. Raman spectroscopy, photoluminescence (PL) and X-ray photoelectron spectroscopy (XPS), scanning tunneling microscope (STM) and electrical transport are used to determine the crystallinity and elucidate the compositional, optical and electrical characteristics of the CVD grown MoS 2 for its use in future electronic applications.
