Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPc
العنوان: | Characterisation of metal-organic semiconductor interfaces: In and Sn on CuPc |
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المؤلفون: | Martin Knupfer, V. Yu. Aristov, Denis V. Vyalikh, O. V. Molodtsova, V. M. Zhilin |
المصدر: | Journal de Physique IV (Proceedings). 132:101-104 |
بيانات النشر: | EDP Sciences, 2006. |
سنة النشر: | 2006 |
مصطلحات موضوعية: | Organic semiconductor, Molecular solid, chemistry, Ultra-high vacuum, Doping, Analytical chemistry, General Physics and Astronomy, chemistry.chemical_element, Electronic structure, Thin film, Electron spectroscopy, Indium |
الوصف: | We present an investigation of the chemistry and electronic structure formation during the development of the interfaces between In or Sn and thin films of archetypal organic molecular solid, CuPc (copper phthalocyanine) in ultra high vacuum (UHV) conditions. The photoemission measurements were performed by means of high-resolution photoemission electron spectroscopy (HR-PES), core-level (CL) and valence-band (VB), and using synchrotron-radiation (SR) facility. At room temperature the two stages of the In/CuPc interface formation upon metal deposition are observed. On the first one In atoms penetrate into organic film, modify it's doping, show obvious chemical interaction with CuPc. The site positions of In ions diffused into the CuPc film are derived to be close to the pyrolle nitrogens of copper phthalocyanine. This stage stops at a stoichiometry of In 2 CuPc. At higher level of indium deposition the metallic film formation on the top of organic film takes place (second stage). The electronic structure of the interface, which forms during Sn deposition onto CuPc thin films, shows both similarity and difference as compare to indium. |
تدمد: | 1764-7177 1155-4339 |
URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7aa3899e5ee5dce0ad4a1f2b88fc0ee9 https://doi.org/10.1051/jp4:2006132020 |
رقم الأكسشن: | edsair.doi...........7aa3899e5ee5dce0ad4a1f2b88fc0ee9 |
قاعدة البيانات: | OpenAIRE |
تدمد: | 17647177 11554339 |
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