Green and Red Emissions at Room Temperature on Er-Doped GaN Submicrometer Rods Synthesized by a Simple Chemical Vapor Deposition Technique
| العنوان: | Green and Red Emissions at Room Temperature on Er-Doped GaN Submicrometer Rods Synthesized by a Simple Chemical Vapor Deposition Technique |
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| المؤلفون: | Francesc Díaz, Magdalena Aguiló, Joan J. Carvajal, J. Carlos Rojo |
| المصدر: | Chemistry of Materials. 19:6543-6547 |
| بيانات النشر: | American Chemical Society (ACS), 2007. |
| سنة النشر: | 2007 |
| مصطلحات موضوعية: | Materials science, Silicon, business.industry, Band gap, General Chemical Engineering, Doping, chemistry.chemical_element, Nanotechnology, General Chemistry, Chemical vapor deposition, Rod, Semiconductor, chemistry, Materials Chemistry, Optoelectronics, Gallium, business, Excitation |
| الوصف: | Er-doped GaN submicron rods have been synthesized on silicon (001) by the direct reaction of gallium and ammonia in a CVD system. Green and red emissions at room temperature coming from the rods with excitation below the energy of the bandgap of the semiconductor have been recorded. |
| تدمد: | 1520-5002 0897-4756 |
| URL الوصول: | https://explore.openaire.eu/search/publication?articleId=doi_________::7b09b2885d7d8dc7030eda49baf54a30 https://doi.org/10.1021/cm702441y |
| رقم الأكسشن: | edsair.doi...........7b09b2885d7d8dc7030eda49baf54a30 |
| قاعدة البيانات: | OpenAIRE |
Find this issue from the American Chemical Society | تدمد: | 15205002 08974756 |
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