Medium voltage solid state transformers based on 15 kV SiC MOSFET and JBS diode

التفاصيل البيبلوغرافية
العنوان: Medium voltage solid state transformers based on 15 kV SiC MOSFET and JBS diode
المؤلفون: Wensong Yu, Dong Chen, Li Wang, Alex Q. Huang, Qi Tian, Qianlai Zhu
المصدر: IECON
بيانات النشر: IEEE, 2016.
سنة النشر: 2016
مصطلحات موضوعية: Engineering, business.industry, 020208 electrical & electronic engineering, 05 social sciences, Electrical engineering, Topology (electrical circuits), High voltage, 02 engineering and technology, Voltage regulator, law.invention, law, MOSFET, 0202 electrical engineering, electronic engineering, information engineering, 0501 psychology and cognitive sciences, business, Transformer, Low voltage, 050107 human factors, Voltage, Diode
الوصف: This paper discusses the advancements in the development of the medium voltage solid state transformer (SST) based on 15 kV SiC MOSFET and JBS diode. Designed for 7.2 kV single phase distribution grid applications, the medium voltage SST converts high voltage AC to low voltage 240/120V ac. The use of ultra-high voltage SiC devices allows the simplification of the power conversion circuit topology. This paper presents the characteristics of the high voltage SiC MOSFET devices as well as the topology innovations to achieve ultra-efficient SST design. Specifically, three different designs are discussed which utilize three-stage, two-stage and single stage power conversion topologies to achieve the AC to AC conversion.
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::7e6c297435ae4d197151075adc27a6d6
https://doi.org/10.1109/iecon.2016.7793121
رقم الأكسشن: edsair.doi...........7e6c297435ae4d197151075adc27a6d6
قاعدة البيانات: OpenAIRE