A low power and low voltage sense amplifier is presented in this brief for emerging nonvolatile memories such as Phase Change Memory (PCM), Resistive RAM (ReRAM) and Spin Transfer Torque Magnetic RAM (STT-MRAM). These memories use a special Alloy element, which is modeled as variable resistor. During programmed (RSET) and erased (SET) state, these elements exhibit large distribution in resistance value. This work presents a fast, reliable, power and area efficient sense amplifier in 110nm BCD technology with embedded PCM option. The proposed sense amplifier is able to sense sub $\mu$A current difference between memory cell and reference current at 1. 2V supply voltage and can operate at entire automotive grade temperature range from -40°C to 175°C.
