Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation

التفاصيل البيبلوغرافية
العنوان: Low-Leakage-Current Ultra-thin SiO2 Film by Low-Temperature Neutral Beam Oxidation
المؤلفون: Chihiro Taguchi, Seiichi Fukuda, Seiji Samukawa, Kazuhiko Endo, Heiji Watanabe, Toru Ikoma
المصدر: Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
بيانات النشر: The Japan Society of Applied Physics, 2006.
سنة النشر: 2006
مصطلحات موضوعية: Materials science, business.industry, Optoelectronics, Low leakage, Nanotechnology, Current (fluid), business, Beam (structure)
URL الوصول: https://explore.openaire.eu/search/publication?articleId=doi_________::8332d7a8f29ada55f38f6e5887d96df1
https://doi.org/10.7567/ssdm.2006.p-1-24
رقم الأكسشن: edsair.doi...........8332d7a8f29ada55f38f6e5887d96df1
قاعدة البيانات: OpenAIRE